BD801

更新时间： 2024-11-03 22:27:27

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	97K
描述
Plastic High Power Silicon NPN Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BD801 数据手册

Order this document

by BD801/D

SEMICONDUCTOR TECHNICAL DATA

8 AMPERE

POWER TRANSISTORS

NPN SILICON

. . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi

complementary circuits.

100 VOLTS

65 WATTS

•

DC Current Gain — h = 40 (Min) @ I = 1.0 Adc

FE C

BD801 is complementary with BD 798, 800, 802

MAXIMUM RATINGS

Rating

Symbol

Value

100

5.0

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

CEO

CBO

EBO

8.0

Base Current

3.0

Total Device Dissipation T = 25 C

Derate above 25 C

522

Watts

mW/ C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

CASE 221A–06

TO–220AB

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.92

C/W

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector–Emitter Sustaining Voltage*

100

—

Vdc

CEO

(I = 0.1 Adc, I = 0)

(I = 0.05 Adc, I = 0)

Collector Cutoff Current

(V = 100 Vdc, I = 0)

0.1

—

mAdc

CBO

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0)

1.0

EBO

DC Current Gain

(I = 1.0 A, V

(I = 3.0 A, V

= 2.0 V)

—

Collector–Emitter Saturation Voltage*

(I = 3.0 Adc, I = 0.3 Adc)

—

1.0

1.6

—

Vdc

MHz

CE(sat)

Base–Emitter On Voltage*

(I = 3.0 Adc, V = 2.0 Vdc)

BE(on)

—

Current–Gain Bandwidth Product

3.0

(I = 0.25 Adc, V

= 10 Vdc,

f = 1.0 MHz)

* Pulse Test: Pulse Width

300 µs. Duty Cycle

2.0%.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

中文翻译

下载PDF

与BD801相关器件

型号	品牌	获取价格	描述	数据表
BD80116	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD80116A	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD801A	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD801AF	MOTOROLA	获取价格	暂无描述
BD801AJ	MOTOROLA	获取价格	7A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD801C	MOTOROLA	获取价格	7A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD801D1	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD801L	MOTOROLA	获取价格	7A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD801N	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD801S	MOTOROLA	获取价格	Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast