Datasheet
Single-Output LDO Regulators
Ultra Low Quiescent Current LDO
Regulator
BD7xxL2EFJ/FP/FP2/FP3-C
●General Description
●Key specification
The BD7xxL2EFJ/FP/FP2/FP3-C are low quiescent
regulators featuring 50V absolute maximum voltage,
and output voltage accuracy of ±2%, 200mA output
current and 6μA (Typ.) current consumption. There
regulators are therefore ideal for applications
requiring a direct connection to the battery and a
low current consumption. Ceramic capacitors can
be used for compensation of the output capacitor
phase. Furthermore, these ICs also feature
overcurrent protection to protect the device from
damage caused by short-circuiting and an
integrated thermal shutdown to protect the device
from overheating at overload conditions.
Ultra low quiescent current:
Output voltage:
Output current capability:
High output voltage accuracy:
Low ESR ceramic capacitor
can be used as output capacitor
6μA (Typ.)
3.3 V or 5.0 V (Typ.)
200mA
±2%
●Packages
W (Typ.) x D (Typ.) x H (Max.)
4.90mm x 6.00mm x 1.00mm
EFJ: HTSOP-J8
FP: TO252-3
6.50mm x 9.50mm x 2.50mm
10.16mm x 15.10mm x 4.70mm
6.53mm x 7.00mm x 1.80mm
●Features
Ultra low quiescent current: 6μA (Typ.)
Output current capability: 200mA
Output voltage: 3.3 V or 5.0 V(Typ.)
High output voltage accuracy: ±2%
Low saturation voltage by using PMOS output
transistor.
FP2: TO263-3F
FP3: SOT223-4F
Integrated overcurrent protection to protect the
IC from damage caused by output
short-circuiting.
Integrated thermal shutdown to protect the IC
from overheating at overload conditions.
Low ESR ceramic capacitor can be used as
output capacitor.
HTSOP-J8, TO252-3, TO263-3F, SOT223-4F
4type package
Figure 1. Package Outlook
●Applications
Automotive (body, audio system, navigation system, etc.)
●Typical Application Circuits
Components externally connected: 0.1 µF ≤ CIN, 4.7 µF ≤ COUT (Typ.)
*Electrolytic, tantalum and ceramic capacitors can be used.
FIN
BD7xxL2FP-C
1:VCC 2:N.C. 3:VOUT
HTSOP-J8
TO252-3
TO263-3F
SOT223-4F
Figure 2. Typical Application Circuits
○Product structure:Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays
.
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TSZ02201-0T2T0AN00010-1-2
14.Mar.2013 Rev.003
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