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BD750A PDF预览

BD750A

更新时间: 2024-11-03 08:51:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 81K
描述
isc Silicon PNP Power Transistors

BD750A 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:NBase Number Matches:1

BD750A 数据手册

 浏览型号BD750A的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistors  
BD750/750A  
DESCRIPTION  
· Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = -90V(Min)- BD750  
= -120V(Min)- BD750A  
·High Power Dissipation  
·Complement to Type BD751/751A  
APPLICATIONS  
·Designed for high voltage and high power amplifier  
applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
-100  
-130  
-90  
UNIT  
BD750  
VCEV  
Collector-Emitter Voltage  
V
BD750A  
BD750  
VCEO(SUS) Collector-Emitter Voltage  
V
BD750A  
-120  
-7  
VEBO  
IC  
Emitter-Base Voltage  
V
A
Collector Current-Continuous  
Base Current-Continuous  
-20  
IB  
-5  
A
PC  
TJ  
Collector Power Dissipation@TC=25  
Junction Temperature  
200  
W
200  
Storage Temperature  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
0.875  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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