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BD746B PDF预览

BD746B

更新时间： 2024-11-03 03:21:35
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管
页数 文件大小 规格书
5页 110K
描述
PNP SILICON POWER TRANSISTORS

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中文翻译

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BD746B 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.77
外壳连接：COLLECTOR最大集电极电流 (IC)：20 A
集电极-发射极最大电压：80 V配置：SINGLE
最小直流电流增益 (hFE)：5JESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

BD746B 数据手册

 浏览型号BD746B的Datasheet PDF文件第2页浏览型号BD746B的Datasheet PDF文件第3页浏览型号BD746B的Datasheet PDF文件第4页浏览型号BD746B的Datasheet PDF文件第5页 
BD746, BD746A, BD746B, BD746C  
PNP SILICON POWER TRANSISTORS  
●
Designed for Complementary Use with the  
BD745 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
●
●
●
●
115 W at 25°C CaseTemperature  
20 A Continuous Collector Current  
25 A Peak Collector Current  
B
C
E
1
2
3
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD746  
-50  
BD746A  
BD746B  
BD746C  
BD746  
-70  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
V
-90  
-110  
-45  
BD746A  
BD746B  
BD746C  
-60  
VCEO  
V
-80  
-100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
-5  
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
-20  
-25  
A
-7  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
115  
W
W
mJ  
°C  
°C  
°C  
°C  
3.5  
2
½LIC  
90  
Operating free air temperature range  
TA  
Tj  
-65 to +150  
-65 to +150  
-65 to +150  
260  
Operating junction temperature range  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,  
BE(off) = 0, RS = 0.1 Ω, VCC = -20 V.  
V
AUGUST 1978 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1
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中文翻译

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