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BD745A PDF预览

BD745A

更新时间: 2024-11-29 03:21:35
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管
页数 文件大小 规格书
5页 110K
描述
NPN SILICON POWER TRANSISTORS

BD745A 数据手册

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BD745, BD745A, BD745B, BD745C  
NPN SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD746 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
115 W at 25°C CaseTemperature  
20 A Continuous Collector Current  
25 A Peak Collector Current  
B
C
E
1
2
3
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD745  
50  
BD745A  
BD745B  
BD745C  
BD745  
70  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
V
90  
110  
45  
BD745A  
BD745B  
BD745C  
60  
VCEO  
V
80  
100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
20  
25  
7
A
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
115  
W
W
mJ  
°C  
°C  
°C  
°C  
3.5  
2
½LIC  
90  
Operating free air temperature range  
TA  
Tj  
-65 to +150  
-65 to +150  
-65 to +150  
260  
Operating junction temperature range  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,  
BE(off) = 0, RS = 0.1 , VCC = 20 V.  
V
AUGUST 1978 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

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