Datasheet > BD745A

BD745A

更新时间： 2024-11-04 03:21:35

品牌	Logo	应用领域
伯恩斯 - BOURNS		晶体晶体管
页数	文件大小	规格书
5页	110K
描述
NPN SILICON POWER TRANSISTORS

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BD745A 数据手册

BD745, BD745A, BD745B, BD745C

NPN SILICON POWER TRANSISTORS

●

Designed for Complementary Use with the

BD746 Series

SOT-93 PACKAGE

(TOP VIEW)

●

115 W at 25°C CaseTemperature

20 A Continuous Collector Current

25 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD745

BD745A

BD745B

BD745C

BD745

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

110

BD745A

BD745B

BD745C

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

115

°C

3.5

½LI_C

Operating free air temperature range

T_A

T_j

-65 to +150

260

Operating junction temperature range

Storage temperature range

T_stg

T_L

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 0.4 A, R_BE= 100 Ω,

_BE(off)= 0, R_S= 0.1 Ω, V_CC= 20 V.

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4 5

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