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BD744B PDF预览

BD744B

更新时间: 2024-01-17 10:17:42
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管
页数 文件大小 规格书
5页 108K
描述
PNP SILICON POWER TRANSISTORS

BD744B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.88最大集电极电流 (IC):15 A
配置:Single最小直流电流增益 (hFE):20
最高工作温度:140 °C极性/信道类型:PNP
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:NO

BD744B 数据手册

 浏览型号BD744B的Datasheet PDF文件第2页浏览型号BD744B的Datasheet PDF文件第3页浏览型号BD744B的Datasheet PDF文件第4页浏览型号BD744B的Datasheet PDF文件第5页 
BD744, BD744A, BD744B, BD744C  
PNP SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD743 Series  
TO-220 PACKAGE  
(TOP VIEW)  
90 W at 25°C Case Temperature  
15 A Continuous Collector Current  
20 A Peak Collector Current  
1
2
3
B
C
E
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD744  
-50  
BD744A  
BD744B  
BD744C  
BD744  
-70  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
V
-90  
-110  
-45  
BD744A  
BD744B  
BD744C  
-60  
VCEO  
V
-80  
-100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
-5  
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
-15  
-20  
A
-5  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
90  
2
W
W
mJ  
°C  
°C  
°C  
°C  
2
½LIC  
90  
Operating free air temperature range  
TA  
Tj  
-65 to +150  
-65 to +150  
-65 to +150  
260  
Operating junction temperature range  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 ,  
BE(off) = 0, RS = 0.1 , VCC = -20 V.  
V
AUGUST 1978 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

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