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BD744A PDF预览

BD744A

更新时间: 2024-11-27 06:41:55
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 114K
描述
isc Silicon PNP Power Transistor

BD744A 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Base Number Matches:1

BD744A 数据手册

 浏览型号BD744A的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
BD744B  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= -80V(Min)  
·Collector Power Dissipation-  
: PC= 90W@ IC= 25℃  
·15A Continuous Collector Current  
·Complement to Type BD743B  
APPLICATIONS  
·Designed for use in general purpose power amplifier and  
switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
-90  
-80  
V
-5  
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
-15  
A
ICM  
-20  
A
IB  
-5  
A
Collector Power Dissipation  
@ Ta=25℃  
2
PC  
W
Collector Power Dissipation  
@ TC=25℃  
90  
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
1.4  
UNIT  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
/W  
/W  
Rth j-c  
62.5  
Rth j-a  
isc Websitewww.iscsemi.cn  

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