Datasheet > BD744

BD744

更新时间： 2024-11-04 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	114K
描述
isc Silicon PNP Power Transistor

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BD744 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD744

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -45V(Min)

·Collector Power Dissipation-

: P_C= 90W@ I_C= 25℃

·15A Continuous Collector Current

·Complement to Type BD743

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

-50

-45

-5

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

-15

I_CM

-20

I_B

-5

Collector Power Dissipation

@ T_a=25℃

P_C

Collector Power Dissipation

@ T_C=25℃

T_J

Junction Temperature

150

-65~150

℃

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.4

UNIT

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

℃/W

R_{th j-c}

62.5

R_{th j-a}

isc Website：www.iscsemi.cn

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