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BD743C PDF预览

BD743C

更新时间: 2024-11-04 12:51:11
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
4页 108K
描述
SILICON POWER TRANSISTORS

BD743C 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Base Number Matches:1

BD743C 数据手册

 浏览型号BD743C的Datasheet PDF文件第2页浏览型号BD743C的Datasheet PDF文件第3页浏览型号BD743C的Datasheet PDF文件第4页 
BD743 – A – B – C  
SILICON POWER TRANSISTORS  
The BD743 series are NPN power transistors in a TO-220 envelope.  
They are intended for use in power linear and switching application.  
High current capability and high power dissipation.  
PNP complements are BD744-A-B-C  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
Ratings  
Value  
Unit  
BD743  
50  
70  
900  
110  
45  
BD743A  
BD743B  
BD743C  
BD743  
Collector-Base Voltage (IE=0)  
V
BD743A  
BD743B  
BD743C  
BD743  
BD743A  
BD743B  
BD743C  
BD743  
BD743A  
BD743B  
BD743C  
BD743  
BD743A  
BD743B  
BD743C  
BD743  
60  
80  
100  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage (IB=0)  
Emitter-Base Voltage (IC=0)  
Collector Current  
V
V
A
A
A
5
15  
20  
5
ICM  
Collector Peak Current  
BD743A  
BD743B  
BD743C  
TC = 25°C  
TA = 25°C  
IB  
Base Current  
90  
2
PT  
Power Dissipation  
W
TJ  
Ts  
Junction Temperature  
Storage Temperature range  
150  
-65 to +150  
°C  
25/09/2012  
COMSET SEMICONDUCTORS  
1 | 4  

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