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BD743A-S PDF预览

BD743A-S

更新时间: 2024-01-04 11:11:52
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网开关晶体管
页数 文件大小 规格书
4页 162K
描述
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3

BD743A-S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:PLASTIC, TO-220, FM-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.69
外壳连接:COLLECTOR最大集电极电流 (IC):15 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):90 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BD743A-S 数据手册

 浏览型号BD743A-S的Datasheet PDF文件第2页浏览型号BD743A-S的Datasheet PDF文件第3页浏览型号BD743A-S的Datasheet PDF文件第4页 
BD743, BD743A, BD743B, BD743C  
NPN SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD744 Series  
TO-220 PACKAGE  
(TOP VIEW)  
90 W at 25°C Case Temperature  
15 A Continuous Collector Current  
20 A Peak Collector Current  
1
2
3
B
C
E
Customer-Specified Selections Available  
This series is obsolete and  
not recommended for new designs.  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD743  
50  
BD743A  
BD743B  
BD74
D743  
70  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
V
90  
110  
45  
D743A  
BD743B  
D743C  
60  
VCEO  
V
80  
100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
15  
20  
A
5
A
Continuous device dissipation at (or bel25astemperature (see Note 2)  
Continuous device dissipation at (elow5°C ee air temperature (see Note 3)  
Unclamped inductive load eny (sNote
Ptot  
Ptot  
90  
2
W
W
mJ  
°C  
°C  
°C  
°C  
2
½LIC  
90  
Operating free air temperature ge  
TA  
Tj  
-65 to +150  
-65 to +150  
-65 to +150  
250  
Operating junction temperature range  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,  
VBE(off) = 0, RS = 0.1 , VCC = 20 V.  
AUGUST 1978 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

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