Datasheet > BD726

BD726

更新时间： 2022-10-15 20:54:48

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	104K
描述
isc Silicon PNP Power Transistor

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BD726 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD726

DESCRIPTION

·DC Current Gain-

: h_FE= 40@ I_C= -0.5A

·Collector-Emitter Breakdown Voltage -

: V_(BR)CEO= -120V(Min)

·Complement to type BD725

APPLICATIONS

·Designed for use in audio output and general purpose

amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-120

-5

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

-4

I_CM

-7

I_B

-1

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

3.5

℃/W

R_{th j-c}

100

R_{th j-a}

isc Website：www.iscsemi.cn

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