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BD723 PDF预览

BD723

更新时间: 2024-11-04 08:51:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 104K
描述
isc Silicon NPN Power Transistor

BD723 数据手册

 浏览型号BD723的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BD723  
DESCRIPTION  
·DC Current Gain-  
: hFE= 40@ IC= 0.5A  
·Collector-Emitter Breakdown Voltage -  
: V(BR)CEO= 100V(Min)  
·Complement to type BD724  
APPLICATIONS  
·Designed for use in audio output and general purpose  
amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
100  
100  
V
5
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
4
A
ICM  
7
1
A
IB  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
30  
W
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
Thermal Resistance,Junction to Ambient  
3.5  
/W  
/W  
Rth j-c  
100  
Rth j-a  
isc Websitewww.iscsemi.cn  

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