Datasheet > BD712

BD712

更新时间： 2024-11-04 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	121K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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BD712 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD708 BD710 BD712

DESCRIPTION

·With TO-220C package

·Complement to type BD707/709/711

APPLICATIONS

·Intented for use in power linear

and switching applications.

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-60

UNIT

BD708

BD710

BD712

BD708

BD710

BD712

V_CBO

Collector-base voltage

Open emitter

-80

-100

-60

V_CEO

Collector-emitter voltage

Open base

-80

-100

-5

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current-DC

Collector current-Pulse

Base current

Open collector

-12

-18

-5

P_T

T_j

Total dissipation

T_C=25℃

℃

Junction temperature

Storage temperature

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

MAX

UNIT

R_{th j-c}

1.67

℃/W

12 3

中文翻译

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