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BD709 PDF预览

BD709

更新时间: 2024-11-03 08:51:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
3页 43K
描述
Silicon NPN Power Transistors

BD709 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

BD709 数据手册

 浏览型号BD709的Datasheet PDF文件第2页浏览型号BD709的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BD707 BD709 BD711  
DESCRIPTION  
·With TO-220C package  
·The BD707 and BD711are respectively  
complement to type BD708 and BD712  
APPLICATIONS  
·Intented for use in power linear  
and switching applications.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
60  
UNIT  
BD707  
BD709  
BD711  
BD707  
BD709  
BD711  
VCBO  
Collector-base voltage  
Open emitter  
80  
100  
60  
V
VCEO  
Collector-emitter voltage  
Open base  
80  
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current-DC  
Collector current-Pulse  
Base current  
Open collector  
V
A
12  
18  
A
5
A
PT  
Tj  
Total dissipation  
TC=25  
75  
W
Junction temperature  
Storage temperature  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
MAX  
UNIT  
Rth j-c  
1.67  
/W  

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