BD705

更新时间： 2024-11-04 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	227K
描述
Silicon NPN Power Transistor

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中文翻译

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数据手册

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BD705 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD705

DESCRIPTION

·DC Current Gain -

: h_FE= 40(Min.)@ I_C= 0.5A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 45V(Min.)

·Complement to Type BD706

APPLICATIONS

·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CES

V_CEO

V_EBO

I_C

PARAMETER

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage V_BE= 0

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.67

UNIT

℃/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_{th j-c}

R_{th j-a}

isc Website：www.iscsemi.cn

中文翻译

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