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BD682 PDF预览

BD682

更新时间: 2023-12-06 20:03:47
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
18页 502K
描述
4A,100V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

BD682 数据手册

 浏览型号BD682的Datasheet PDF文件第2页浏览型号BD682的Datasheet PDF文件第3页浏览型号BD682的Datasheet PDF文件第4页浏览型号BD682的Datasheet PDF文件第5页浏览型号BD682的Datasheet PDF文件第6页浏览型号BD682的Datasheet PDF文件第7页 
BD676 BD682  
BD678 BD684  
BD680  
www.centralsemi.com  
SILICON  
DESCRIPTION:  
PNP DARLINGTON  
POWER TRANSISTORS  
The CENTRAL SEMICONDUCTOR BD676 series are  
silicon PNP Darlington power transistors designed for  
audio and video output applications.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL BD676 BD678 BD680 BD682 BD684 UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
Thermal Resistance  
V
V
V
45  
45  
60  
60  
80  
80  
5.0  
4.0  
6.0  
100  
40  
100  
100  
120  
120  
V
V
V
A
A
mA  
W
°C  
°C/W  
°C/W  
CBO  
CEO  
EBO  
I
C
I
CM  
I
P
B
D
T , T  
-65 to +150  
3.12  
100  
J
stg  
JC  
JA  
Θ
Θ
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=Rated V  
=0.6Rated V  
=½Rated V  
=5.0V  
200  
μA  
mA  
μA  
mA  
V
V
V
V
V
CBO  
CBO  
CEO  
EBO  
CEO  
CEO  
CEO  
CEO  
CEO  
CE(SAT)  
BE(ON)  
FE  
CB  
CB  
CE  
EB  
CBO  
CBO,  
CEO  
T =150°C  
2.0  
500  
5.0  
C
BV  
BV  
BV  
BV  
BV  
V
V
h
h
I =50mA (BD676)  
45  
60  
80  
100  
120  
C
I =50mA (BD678)  
C
I =50mA (BD680)  
C
I =50mA (BD682)  
C
I =50mA (BD684)  
C
I =1.5A, I =6.0mA (BD676: I =2.0A)  
2.5  
2.5  
V
V
C
B
C
C
C
V
V
V
=3.0V, I =1.5A (BD676: I =2.0A)  
CE  
CE  
CE  
C
=3.0V, I =1.5A (BD676: I =2.0A)  
750  
10  
C
=3.0V, I =1.5A,  
fe  
C
f=1.0MHz (BD676: I =2.0A)  
C
fh  
V
V
V
V
=3.0V, I =1.5A (BD676: I =2.0A)  
60  
kHz  
A
A
μs  
μs  
fe  
(SB)  
(SB)  
on  
CE  
CE  
CE  
CC  
C
C
I
I
t
t
=50V, tp=20ms  
0.8  
1.0  
=40V, tp=20ms (BD676)  
=30V, I  
=I  
=1.5A  
=6.0mA  
0.3  
1.5  
1.5  
5.0  
Con  
I
off  
Bon Boff  
R1 (13-March 2014)  

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