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BD682 PDF预览

BD682

更新时间: 2024-02-07 00:36:09
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 118K
描述
Silicon PNP Power Transistors

BD682 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-225AA包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.14
最大集电极电流 (IC):4 A集电极-发射极最大电压:100 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):750
JEDEC-95代码:TO-225AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BD682 数据手册

 浏览型号BD682的Datasheet PDF文件第2页浏览型号BD682的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
BD676A/678A/680A/682  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type BD675A/677A/679A/681  
·DARLINGTON  
·High DC current gain  
APPLICATIONS  
·For medium power linear and  
switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-45  
UNIT  
BD676A  
BD678A  
BD680A  
BD682  
-60  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-100  
-45  
BD676A  
BD678A  
BD680A  
BD682  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter -base voltage  
Collector current  
Open collector  
V
A
-4  
Collector current-Peak  
Base current  
-6  
A
-0.1  
40  
A
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
150  
-65~150  
Tstg  

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