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BD677/A PDF预览

BD677/A

更新时间: 2024-01-19 01:53:22
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
6页 78K
描述
(75.32 k)

BD677/A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SIP
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.07
最大集电极电流 (IC):4 A集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):750
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1 MHz
Base Number Matches:1

BD677/A 数据手册

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BD677/A/679/A/681  
BD678/A/680/A/682  
COMPLEMENTARY SILICON  
POWER DARLINGTON TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
MONOLITHIC DARLINGTON  
CONFIGURATION  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
APPLICATION  
1
2
LINEAR AND SWITCHING INDUSTRIAL  
EQUIPMENT  
3
SOT-32  
DESCRIPTION  
The BD677, BD677A, BD679, BD679A and  
BD681 are silicon epitaxial-base NPN power  
transistors in monolithic Darlington configuration  
mounted in Jedec SOT-32 plastic package.  
They are intended for use in medium power linar  
and switching applications  
INTERNAL SCHEMATIC DIAGRAM  
The complementary PNP types are BD678,  
BD678A, BD680, BD680A and  
respectively.  
BD682  
R1 Typ.= 7K  
R2 Typ.= 230  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN BD677/A  
BD679/A  
BD681  
BD682  
100  
PNP  
BD678/A  
BD680/A  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
60  
60  
80  
V
V
80  
100  
5
V
4
A
ICM  
IB  
Collector Peak Current  
Base Current  
6
0.1  
A
A
Total Dissipation at Tc 25 oC  
Ptot  
Tstg  
Tj  
40  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/6  
December 2000  

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