BD652

更新时间： 2024-01-08 16:51:44

品牌	Logo	应用领域
伯恩斯 - BOURNS		晶体晶体管功率双极晶体管局域网
页数	文件大小	规格书
5页	115K
描述
PNP SILICON POWER DARLINGTONS

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技术参数
数据手册

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BD652 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.73
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	8 A
集电极-发射极最大电压：	120 V	配置：	DARLINGTON
最小直流电流增益 (hFE)：	750	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	PNP
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	SILICON	Base Number Matches：	1

BD652 数据手册

BD646, BD648, BD650, BD652

PNP SILICON POWER DARLINGTONS

●

Designed for Complementary Use with

BD645, BD647, BD649 and BD651

TO-220 PACKAGE

(TOP VIEW)

●

62.5 W at 25°C CaseTemperature

8 A Continuous Collector Current

Minimum h of 750 at 3V, 3 A

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD646

BD648

BD650

BD652

BD646

BD648

BD650

BD652

-80

-100

-120

-140

-60

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

-80

V_CEO

-100

-120

-5

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

-8

-12

-0.3

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

62.5

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

260

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= -5 mA, R_BE= 100 Ω,

_BE(off)= 0, R_S= 0.1 Ω, V_CC= -20 V.

MAY 1993 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4 5

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