Datasheet > BD649

BD649

更新时间： 2024-01-30 02:06:51

品牌	Logo	应用领域
POINN		/
页数	文件大小	规格书
6页	119K
描述
NPN SILICON POWER DARLINGTONS

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BD649 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.75	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	8 A	集电极-发射极最大电压：	100 V
配置：	DARLINGTON	最小直流电流增益 (hFE)：	750
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e1	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	TIN SILVER COPPER	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	SILICON	Base Number Matches：	1

BD649 数据手册

BD645, BD647, BD649, BD651

NPN SILICON POWER DARLINGTONS

MAY 1993 - REVISED MARCH 1997

●

Designed for Complementary Use with

BD646, BD648, BD650 and BD652

TO-220 PACKAGE

(TOP VIEW)

●

62.5 W at 25°C Case Temperature

8 A Continuous Collector Current

Minimum h of 750 at 3 V, 3 A

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD645

BD647

BD649

BD651

BD645

BD647

BD649

BD651

100

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

120

140

V_CEO

100

120

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

0.3

62.5

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

260

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 5 mA, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= 20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

中文翻译

下载PDF

与BD649相关器件

型号	品牌	获取价格	描述	数据表
BD64950EFJ	ROHM	获取价格	BD64950EFJ is a built in 1 channel H-bridge motor driver for DC brush motors. This driver
BD649-6200	RENESAS	获取价格	8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD649-6203	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD649-6226	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD649-6255	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD649-6258	RENESAS	获取价格	8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD649-6261	RENESAS	获取价格	8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD649-6263	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD649-6264	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD649-6265	RENESAS	获取价格	8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB

与BD649相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

4
PMOS管背靠背连接：串联还是并联？
2024-06-28

4
高压电解电容的分类与选型策略
2024-06-28

5
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

10

产品中心

服务支持

精选活动

关于我们

帮助中心

BD649

BD649 技术参数

BD649 数据手册

与BD649相关器件

与BD649相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BD649

BD649 技术参数

BD649 数据手册

与BD649相关器件

与BD649相关文章

您还可以找

您在本页遇到什么问题？