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BD5333G-TR

更新时间: 2024-02-07 10:45:20
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罗姆 - ROHM /
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BD5333G-TR 数据手册

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Datasheet  
Voltage Detector IC Series  
Free Delay Time Setting  
CMOS Voltage Detector IC Series  
BD52xx series BD53xx series  
General Description  
Key Specifications  
¢ Detection voltage:  
Rohm's BD52xx and BD53xx series are highly  
accurate, low current consumption Voltage Detector  
ICs with a capacitor-controlled time delay. The line up  
includes BD52xx devices with N channel open drain  
output and BD53xx devices with CMOS output. The  
devices are available for specific detection voltages  
ranging from 2.3V to 6.0V in increments of 0.1V.  
Features  
2.3V to 6.0V (Typ.)  
0.1V steps  
¢ High accuracy detection voltage:  
¢ Ultra-low current consumption:  
Package  
±1.0%  
0.95µA (Typ.)  
SSOP5:  
2.90mm x 2.80mm x 1.25mm  
VSOF5:  
1.60mm x 1.60mm x 0.60mm  
¢ Delay Time Controlled by external Capacitor  
¢ Two output types (N channel open drain and CMOS  
output)  
Applications  
Circuits using microcontrollers or logic circuits that  
require a reset.  
¢ Ultra-low current consumption  
¢ Very small and low height package  
¢ Package SSOP5 is similar to SOT-23-5(JEDEC)  
Typical Application Circuit  
VDD1  
VDD1  
VDD2  
R
L
Micro  
controller  
RST  
BD53xx  
Micro  
controller  
R
ST  
BD52xx  
CT  
C
T
CL  
C
L
(Capacitor for  
noise filtering)  
(Capacitor for  
noise filtering)  
GND  
GND  
Open Drain Output type  
BD52xx Series  
CMOS Output type  
BD53xx Series  
Connection Diagram  
SSOP5  
CT  
N.C.  
VSOF5  
TOP VIEW  
TOP VIEW  
VDD GND  
5
4
Lot. No  
Lot. No  
Marking  
Marking  
2 3  
1
VOUT SUB CT  
VOUT VDD GND  
Pin Descriptions  
SSOP5  
VSOF5  
PIN No. Symbol  
Function  
Reset Output  
PIN No. Symbol  
Function  
1
2
VOUT  
VDD  
1
2
VOUT  
Reset Output  
Substrate*  
Power Supply Voltage  
SUB  
Capacitor connection terminal for  
output delay time  
GND  
3
4
5
GND  
N.C.  
CT  
GND  
3
4
5
CT  
Unconnected Terminal  
GND  
VDD  
Capacitor connection terminal for  
output delay time  
Power Supply Voltage  
*Connect the substrate to GND.  
Product structureSilicon monolithic integrated circuit This product is not designed for protection against radioactive rays  
.www.rohm.com  
TSZ02201-0R7R0G300040-1-2  
22.May.2013 Rev.006  
© 2013 ROHM Co., Ltd. All rights reserved.  
1/13  
TSZ2211114001  

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