Datasheet > BD500B

BD500B

更新时间： 2024-09-17 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	110K
描述
isc Silicon PNP Power Transistors

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技术参数
数据手册

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BD500B 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

BD500B 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BD500/B

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -50V(Min)

-80V(Min)

·High Power Dissipation

APPLICATIONS

·Designed for use in high power audio amplifiers utilizing

complementary or quasi complementary circuits.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-55

UNIT

BD500

V_CBO

Collector-Base Voltage

BD500B

BD500

-85

-50

V_CEO

Collector-Emitter Voltage

BD500B

-80

V_EBO

Emitter-Base Voltage

-5

I_C

Collector Current-Continuous

-10

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

1.39

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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