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BD437

更新时间: 2024-11-28 12:55:47
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管局域网
页数 文件大小 规格书
1页 102K
描述
TRANSISTOR (NPN)

BD437 数据手册

  
RoHS  
BD433/435/437  
BD433/435/437 TRANSISTOR (NPN)  
TO-126  
FEATURES  
Power dissipation  
PCM:  
1.25  
W (Tamb=25)  
1. EMITTER  
Collector current  
ICM:  
2. COLLECTOR  
3. BASE  
4
A
1 2 3  
Collector-base voltage  
V(BR)CBO  
:
BD433  
22 V  
BD435 32 V  
BD437 45 V  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
TYP  
MAX  
UNIT  
BD433  
22  
32  
45  
22  
32  
45  
5
V(BR)CBO  
V
Collector-base breakdown voltage  
Ic=100µA, IE=0  
BD435  
BD437  
BD433  
V(BR)CEO  
V(BR)EBO  
ICBO  
V
V
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic=100mA, IB=0  
BD435  
BD437  
IE=100µA, IC=0  
CB=22V, IE=0  
V
BD433  
BD435  
VCB=32V, IE=0  
VCB=45V, IE=0  
µA  
1
BD437  
BD433  
BD435  
VCE=22V, IE=0  
ICEO  
VCE=32V, IE=0  
VCE=45V, IE=0  
VEB=5V, IE=0  
µA  
µA  
Collector cut-off current  
Emitter cut-off current  
10  
1
BD437  
IEBO  
hFE(1)  
V
CE=1V, IC=500mA  
85  
40  
30  
50  
40  
VCE=5V, IC=10mA BD433/BD435  
BD437  
hFE(2)  
DC current gain  
VCE=1V, IC=2A  
BD433/BD435  
BD437  
hFE(3)  
WEJ ELECTRONIC CO.,LTD  
IC=2A, IB=0.2A  
VCE=1V, IC=2A  
BD433/BD435  
0.5  
0.6  
1.1  
1.2  
VCE(sat)  
V
Collector-emitter saturation voltage  
BD437  
BD433/BD435  
BD437  
VBE  
V
Base-emitter voltage  
3
MHz  
Transition frequency  
fT  
VCE=1V, IC=250mA  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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