5秒后页面跳转
BD437 PDF预览

BD437

更新时间: 2024-11-28 12:50:11
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管局域网
页数 文件大小 规格书
3页 266K
描述
NPN Silicon Power Transistors

BD437 数据手册

 浏览型号BD437的Datasheet PDF文件第2页浏览型号BD437的Datasheet PDF文件第3页 
M C C  
TM  
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
BD433/BD435/BD437  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
·
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates  
NPN Silicon  
Power Transistors  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
Intended for use in medium power near and switching applications  
With TO-126 package  
The complementary PNP type is BD434, BD436, BD438  
ꢀꢁꢂꢃꢄꢅꢆ  
K
A
N
Maximum Ratings  
Symbol  
VCEO  
Parameter  
Collector-Emitter Voltage  
Rating  
22  
32  
45  
22  
32  
45  
Unit  
V
D
BD433  
BD435  
BD437  
BD433  
BD435  
BD437  
BD433  
BD435  
BD437  
E
M
B
VCBO  
Collector-Base Voltage  
Emitter-Base Voltage  
V
V
VEBO  
5.0  
1
2
3
IC  
PC  
TJ  
Collector Current  
4.0  
1.25  
-55 to +150  
A
L
Collector power dissipation  
Junction Temperature  
Storage Temperature  
W
R
R
G
TSTG  
-55 to +150  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
C
OFF CHARACTERISTICS  
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
(IC=100mAdc, IB=0)  
BD433  
BD435  
BD437  
22  
32  
45  
---  
---  
---  
Vdc  
V(BR)CBO  
Collector-Base Breakdown Voltage  
F
Q
22  
32  
45  
---  
---  
---  
(IC=100IAdc, IE=0)  
BD433  
BD435  
BD437  
Vdc  
Vdc  
PIN 1.  
PIN 2.  
PIN 3.  
EMITTER  
COLLECTOR  
BASE  
J
V(BR)EBO  
ICBO  
Emitter-Base Breakdown Voltage  
(IE=100IAdc, IC=0)  
5
---  
DIMENSIONS  
Collector-Base Cutoff Current  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢀꢁꢆ  
ꢇꢇꢆ  
ꢇꢀꢁꢆ  
7.40  
(VCB=22Vdc,IE=0)  
(VCB=32Vdc,IE=0)  
(VCB=45Vdc,IE=0)  
BD433  
BD435  
BD437  
ꢈꢀꢇꢆ  
ꢉꢆ  
ꢇꢉꢊꢆ  
0.307ꢆ  
0.433  
0.618  
ꢎꢏꢐꢒ1  
0.126  
0.034  
0.054  
ꢇꢉꢊꢆ  
ꢁꢋꢌꢄꢆ  
---  
1.0  
uAdc  
0.291  
0.417  
0.602  
ꢎꢏꢐꢑ4  
0.118  
0.026  
0.046  
7.80  
11.00  
15.70  
4.10  
3.20  
0.86  
1.37  
10.60  
15.30  
3.90  
3.00  
0.66  
1.17  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
ICEO  
Collector-Base Cutoff Current  
(VCE=22Vdc,IE=0)  
(VCE=32Vdc,IE=0)  
(VCE=45Vdc,IE=0)  
BD433  
BD435  
BD437  
---  
---  
10  
uAdc  
uAdc  
ꢕꢆ  
0.090TYP  
0.098  
2.290TYP  
2.50 2.90  
2.30  
0.30  
1.50  
0.60  
IEBO  
Emitter-Base Cutoff Current  
(VEB=5.0Vdc, IC=0)  
1.0  
ꢖꢆ  
0.114  
L
M
N
0.083  
0.000  
0.043  
0.091  
0.012  
0.059  
2.10  
0.00  
1.10  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.  
Q
0.018  
0.024  
0.45  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

与BD437相关器件

型号 品牌 获取价格 描述 数据表
BD437/D ETC

获取价格

Plastic Medium Power Silicon NPN Transistor
BD437G ONSEMI

获取价格

Plastic Medium Power Silicon NPN Transistor
BD437LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD437P MCC

获取价格

TRANSISTOR 4 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126, PLASTIC PACKAGE-3, BIP General Pu
BD437S FAIRCHILD

获取价格

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD437S ONSEMI

获取价格

Medium Power NPN Bipolar Power Transistor
BD437S_11 FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
BD437T ONSEMI

获取价格

Plastic Medium Power Silicon NPN Transistor
BD437TG ONSEMI

获取价格

Plastic Medium Power Silicon NPN Transistor
BD438 SECOS

获取价格

Plastic Encapsulate Transistors