5秒后页面跳转
BD434-B PDF预览

BD434-B

更新时间: 2024-02-04 05:23:19
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 80K
描述
Transistor

BD434-B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92JESD-609代码:e0
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

BD434-B 数据手册

 浏览型号BD434-B的Datasheet PDF文件第2页浏览型号BD434-B的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
BD434/BD436/BD438  
Micro Commercial Components  
Features  
x
Intended for use in medium power near and switching applications  
With TO-126 package  
The complementary NPN type is BD433, BD435, BD437  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
PNP Silicon  
Power Transistors  
x
Marking: Type Number  
l
Maximum Ratings  
ꢀꢁꢂꢃꢄꢅꢆ  
A
K
Symbol  
VCEO  
Rating  
Collector-Emitter Voltage  
Rating  
-22  
Unit  
D
BD434  
BD436  
BD438  
BD434  
BD436  
BD438  
BD434  
BD436  
BD438  
V
V
V
A
-32  
-45  
-22  
-32  
-45  
R
E
VCBO  
Collector-Base Voltage  
Emitter-Base Voltage  
B
VEBO  
-5.0  
N
P
M
F
IC  
PC  
TJ  
Collector Current  
-4.0  
1.25  
-55 to +150  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
W
R
R
G
L
TSTG  
-55 to +150  
H
C
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
1
2
3
(IC=-10mAdc, IB=0)  
BD434  
BD436  
BD438  
-22  
-32  
-45  
---  
---  
---  
Vdc  
J
J
Q
PIN 1.  
PIN 2.  
PIN 3.  
EMITTER  
COLLECTOR  
BASE  
V(BR)CBO  
Collector-Base Breakdown Voltage  
(IC=-1mAdc, IE=0)  
BD434  
BD436  
BD438  
-22  
-32  
-45  
---  
---  
---  
Vdc  
Vdc  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢁꢄꢇꢈꢃꢅꢉ  
ꢂꢁꢄꢉ  
ꢍꢎꢏꢍꢉ  
ꢂꢂꢉ  
V(BR)EBO  
ICBO  
Emitter-Base Breakdown Voltage  
(IE=-1mAdc, IC=0)  
ꢀꢁꢂꢉ  
ꢊꢉ  
ꢒꢉ  
ꢇꢉ  
ꢀꢉ  
ꢃꢉ  
ꢘꢉ  
ꢂꢊꢋꢉ  
ꢍꢎꢏꢏꢉ  
ꢍꢎꢓꢔꢉ  
ꢍꢎꢓꢏꢉ  
ꢍꢎꢕꢔꢉ  
ꢍꢎꢕꢏꢉ  
ꢍꢎꢍꢏꢏꢉ  
ꢍꢎꢍꢐꢉ  
ꢍꢎꢍꢏꢏꢉ  
ꢍꢎꢕꢍꢉ  
ꢍꢎꢕꢖꢉ  
ꢍꢎꢔꢖꢉ  
ꢍꢎꢍꢖꢉ  
ꢍꢎꢍꢗ  
ꢂꢁꢄꢉ  
ꢐꢎꢐꢍꢉ  
ꢂꢊꢋꢉ  
ꢄꢆꢌꢃꢉ  
ꢉꢉ  
-5  
---  
ꢑꢎꢏꢍ  
ꢕꢖꢎꢗꢍ  
ꢕꢏꢎꢏꢔꢉ  
ꢖꢎꢍ  
Collector-Base Cutoff Current  
ꢍꢎꢓꢍꢉ  
ꢍꢎꢕꢓꢉ  
ꢍꢎꢕꢗꢉ  
ꢍꢎꢍꢗꢓꢉ  
ꢍꢎꢍꢔꢉ  
ꢍꢎꢍꢗꢓꢉ  
ꢍꢎꢍꢑꢉ  
ꢍꢎꢕꢗꢉ  
ꢍꢎꢔꢏꢉ  
ꢕꢗꢎꢐꢔꢉ  
ꢏꢎꢑꢍꢉ  
ꢏꢎꢕꢍꢉ  
ꢍꢎꢔꢓꢉ  
ꢕꢎꢓꢍꢉ  
ꢍꢎꢔꢓꢉ  
ꢗꢎꢍꢑꢉ  
ꢏꢎꢍꢓꢉ  
ꢕꢓꢎꢝꢍꢉ  
(VCB=-22Vdc,IE=0)  
(VCB=-32Vdc,IE=0)  
(VCB=-45Vdc,IE=0)  
BD434  
BD436  
BD438  
---  
-100  
uAdc  
ꢏꢎꢏꢍ  
ꢍꢎꢑꢓ  
ꢕꢎꢐꢍ  
ꢍꢎꢑꢓ  
ꢗꢎꢖꢑ  
ꢏꢎꢖꢓ  
ꢕꢔꢎꢏꢍ  
ꢕꢎꢍ  
ICEO  
Collector-Base Cutoff Current  
(VCE=-22Vdc,IE=0)  
(VCE=-32Vdc,IE=0)  
ꢙꢉ  
ꢈꢉ  
ꢚꢉ  
BD434  
BD436  
BD438  
---  
---  
-100  
-1.0  
uAdc  
ꢛꢉ  
ꢜꢉ  
(VCE=-45Vdc,IE=0)  
IEBO  
Emitter-Base Cutoff Current  
(VEB=-5.0Vdc, IC=0)  
ꢂꢉ  
mAdc  
ꢍꢎꢓ  
ꢞꢉ  
 ꢉ  
!ꢉ  
ꢍꢎꢍꢔꢉ  
ꢍꢎꢍꢕꢑꢉ  
ꢍꢎꢖꢏꢉ  
ꢍꢎꢍꢑꢉ  
ꢍꢎꢍꢗꢏꢉ  
ꢍꢎꢖꢖꢉ  
ꢕꢎꢓꢓꢉ  
ꢍꢎꢖꢓꢉ  
ꢕꢎꢝꢓ  
ꢍꢎꢔꢍ  
ꢕꢕꢎꢗꢍ  
ꢕꢍꢎꢑꢍꢉ  
www.mccsemi.com  
Revision: 2  
2006/05/26  
1 of 3  

与BD434-B相关器件

型号 品牌 描述 获取价格 数据表
BD434-BP-HF MCC Power Bipolar Transistor,

获取价格

BD434C NJSEMI Trans GP BJT PNP 22V 4A 3-Pin(3+Tab) TO-126 Bulk

获取价格

BD434LEADFREE CENTRAL Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/

获取价格

BD434S FAIRCHILD Medium Power Linear and Switching Applications

获取价格

BD434S ONSEMI PNP外延硅晶体管

获取价格

BD434S_NL FAIRCHILD Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/

获取价格