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BD3806 PDF预览

BD3806

更新时间: 2024-11-02 15:28:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
4页 41K
描述
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

BD3806 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
最大集电极电流 (IC):2 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:140 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BD3806 数据手册

 浏览型号BD3806的Datasheet PDF文件第2页浏览型号BD3806的Datasheet PDF文件第3页浏览型号BD3806的Datasheet PDF文件第4页 
BD376/378/380  
Medium Power Linear and Switching  
Applications  
Complement to BD375, BD377 and BD379 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage : BD376  
- 50  
- 75  
- 100  
V
V
V
CBO  
: BD378  
: BD380  
V
Collector-Emitter Voltage : BD376  
- 45  
- 60  
- 80  
V
V
V
CEO  
EBO  
: BD378  
: BD380  
V
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
- 5  
- 2  
V
A
I
I
I
C
- 3  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
25  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
*Collector-Emitter Sustaining Voltage  
CEO  
: BD376  
: BD378  
: BD380  
I = - 100mA, I = 0  
- 45  
- 60  
- 80  
V
V
V
C
B
BV  
Collector-Base  
Breakdown Voltage  
: BD376  
: BD378  
: BD380  
: BD376  
: BD378  
: BD380  
I = - 100µA, I = 0  
- 50  
- 75  
- 100  
V
V
V
CBO  
C
E
I
Collector Cut-off Current  
V
= - 45V, I = 0  
- 2  
- 2  
- 2  
µA  
µA  
µA  
CBO  
CB  
CB  
CB  
E
V
V
= - 60V, I = 0  
E
= - 80V, I = 0  
E
I
Emitter Cut-off Current  
*DC Current Gain  
V
= - 5V, I = 0  
- 100  
375  
µA  
EBO  
EB  
C
h
h
V
V
= - 2V, I = - 0.15A  
40  
20  
FE1  
FE2  
CE  
CE  
C
= - 2V, I = - 1A  
C
V
V
(sat)  
*Collector-Emitter Saturation Voltage  
*Base-Emitter ON Voltage  
Turn ON Time  
I = - 1A, I = - 0.1A  
- 1  
V
V
CE  
C
B
(on)  
V
= - 2V, I = -1A  
- 1.5  
BE  
CE  
C
t
V
= - 30V, I = - 0.5A  
50  
ns  
ns  
ON  
CC  
C
I
= - I = - 0.05A  
t
Turn OFF Time  
B1  
B2  
500  
OFF  
R = 60Ω  
L
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed  
h
Classificntion  
FE  
Classification  
6
10  
16  
100 ~ 250  
25  
h
40 ~ 100  
63 ~ 160  
150 ~ 375  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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