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BD380-10 PDF预览

BD380-10

更新时间: 2024-11-02 20:05:47
品牌 Logo 应用领域
美国国家半导体 - NSC /
页数 文件大小 规格书
36页 1478K
描述
TRANSISTOR,BJT,PNP,80V V(BR)CEO,2A I(C),TO-126

BD380-10 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.67
最大集电极电流 (IC):2 A配置:Single
最小直流电流增益 (hFE):63JESD-609代码:e0
最高工作温度:140 °C极性/信道类型:PNP
最大功率耗散 (Abs):15 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

BD380-10 数据手册

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Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
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BD380-25 SAMSUNG

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Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
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TRANSISTOR,BJT,PNP,80V V(BR)CEO,2A I(C),TO-126
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