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BD378 PDF预览

BD378

更新时间: 2024-11-02 06:41:51
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 117K
描述
isc Silicon PNP Power Transistors

BD378 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

BD378 数据手册

 浏览型号BD378的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistors  
BD376/378/380  
DESCRIPTION  
·DC Current Gain-  
: hFE= 20(Min)@ IC= -1A  
·Complement to Type BD375/377/379  
APPLICATIONS  
·Designed for medium power linear and switching  
applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
-50  
UNIT  
BD376  
BD378  
BD380  
BD376  
BD378  
BD380  
VCBO  
Collector-Base Voltage  
V
-75  
-100  
-45  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-60  
-80  
VEBO  
IC  
ICM  
IB  
-5  
V
A
Collector Current-Continuous  
Collector Current-Peak  
-2  
-3  
A
Base Current-Continuous  
-1  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
TJ  
25  
W
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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