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BD376-6 PDF预览

BD376-6

更新时间: 2024-11-02 19:50:27
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
2页 97K
描述
Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

BD376-6 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.77外壳连接:ISOLATED
最大集电极电流 (IC):2 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP功耗环境最大值:25 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
VCEsat-Max:1 VBase Number Matches:1

BD376-6 数据手册

 浏览型号BD376-6的Datasheet PDF文件第2页 

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