生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.32 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 45 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 140 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD37503FV | ROHM |
获取价格 |
内置4路输入选择器和2频段均衡器。此外,还是可切换使用以衰减响度与DAC输出中产生的多余噪 | |
BD37503FV-E2 | ROHM |
获取价格 |
Consumer Circuit, PDSO20, 6.50 X 6.40 MM, 1.45 MM HEIGHT, ROHS COMPLIANT, SSOP-20 | |
BD37510 | FAIRCHILD |
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Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
BD375-10 | SAMSUNG |
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Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
BD37510STU | FAIRCHILD |
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Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
BD37511FS | ROHM |
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Silicon Monolithic Integrated Circuit | |
BD37511FS-E2 | ROHM |
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Consumer Circuit, BICMOS, PDSO20, ROHS COMPLIANT, SSOP-20 | |
BD37512FS | ROHM |
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Silicon Monolithic Integrated Circuit | |
BD37512FS-E2 | ROHM |
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Consumer Circuit, BICMOS, PDSO20, SSOP-20 | |
BD37513FS | ROHM |
获取价格 |
Silicon Monolithic Integrated Circuit |