Datasheet > BD3531F_15

BD3531F_15

更新时间： 2024-09-27 01:17:59

品牌	Logo	应用领域
罗姆 - ROHM		动态存储器双倍数据速率
页数	文件大小	规格书
19页	1493K
描述
Termination Regulator for DDR-SDRAMs

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BD3531F_15 数据手册

Datasheet

Termination Regulator for DDR-SDRAMs

BD3531F

General Description

Key Specifications

BD3531F is a termination regulator that complies with

JEDEC requirements for DDR-SDRAM. This linear

power supply uses a built-in N-channel MOSFET and

high-speed OP-AMPS specially designed to provide

excellent transient response. It has a sink/source

current capability up to 1.5A and has a power supply

bias requirement of 5.0V for driving the N-channel

MOSFET. By employing an independent reference

voltage input (VDDQ) and a feedback pin (VTTS), this

termination regulator provides excellent output voltage

accuracy and load regulation as required by JEDEC

standards. Additionally, BD3531F has a reference

power supply output (VREF) for DDR-SDRAM or for

memory controllers. Unlike the VTT output that goes to

“Hi-Z” state, the VREF output is kept unchanged when

EN input is changed to “Low”, making this IC suitable

for DDR-SDRAM under “Self Refresh” state.



Termination Input Voltage Range:

VCC Input Voltage Range:

Output Voltage:

1.0V to 5.5V

4.5V to 5.5V

1/2xV_VDDQV(Typ)

1.5A(Max)

Output Current:

High Side FET ON-Resistance:

Low side FET ON-Resistance:

Standby Current:

0.4Ω(Typ)

0.8mA (Typ)

Operating Temperature Range: -10°C to +100°C

Package

W(Typ) x D(Typ) x H(Max)

Features



Incorporates

a Push-Pull Power Supply for

Termination (VTT)



Incorporates a Reference Voltage Circuit (VREF)

Incorporates an Enabler

Incorporates an Undervoltage Lockout (UVLO)

Incorporates a Thermal Shutdown Protector (TSD)

Compatible with Dual Channel (DDR-II)

SOP8

5.00mm x 6.20mm x 1.71mm

Applications

Power supply for DDR I/II - SDRAM

Typical Application Circuit, Block Diagram

VTT_IN

VCC

VDDQ

VCC

VTT_IN

VCC

50kΩ

UVLO

Reference

Block

VTT

TSD

UVLO

VCC

VTT

50kΩ

UVLO

TSD

VTTS

VREF

Thermal

UVLO

Protection

½ x

Enable

VDDQ

GND

○Product structure：Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays

www.rohm.com

TSZ22111・14・001

TSZ02201-0J2J0A900950-1-2

02.Nov.2015 Rev.001

1/15

12 3 4 5 6 7...19

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