5秒后页面跳转
BD244C PDF预览

BD244C

更新时间: 2024-11-25 22:48:19
品牌 Logo 应用领域
POINN 晶体晶体管
页数 文件大小 规格书
6页 89K
描述
PNP SILICON POWER TRANSISTORS

BD244C 数据手册

 浏览型号BD244C的Datasheet PDF文件第2页浏览型号BD244C的Datasheet PDF文件第3页浏览型号BD244C的Datasheet PDF文件第4页浏览型号BD244C的Datasheet PDF文件第5页浏览型号BD244C的Datasheet PDF文件第6页 
BD244, BD244A, BD244B, BD244C  
PNP SILICON POWER TRANSISTORS  
Copyright © 1997, Power Innovations Limited, UK  
JUNE 1973 - REVISED MARCH 1997  
Designed for Complementary Use with the  
BD243 Series  
TO-220 PACKAGE  
(TOP VIEW)  
65 W at 25°C Case Temperature  
6 A Continuous Collector Current  
10 A Peak Collector Current  
1
2
3
B
C
E
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD244  
-55  
BD244A  
BD244B  
BD244C  
BD244  
-70  
Collector-emitter voltage (RBE = 100 W)  
VCER  
V
-90  
-115  
-45  
BD244A  
BD244B  
BD244C  
-60  
Collector-emitter voltage (IC = -30 mA)  
VCEO  
V
-80  
-100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
-5  
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
-6  
-10  
A
-3  
65  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
W
W
mJ  
°C  
°C  
°C  
2
2
½LIC  
62.5  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp £ 0.3 ms, duty cycle £ 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 W,  
VBE(off) = 0, RS = 0.1 W, VCC = -20 V.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

与BD244C相关器件

型号 品牌 获取价格 描述 数据表
BD244C16 MOTOROLA

获取价格

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD244C16A MOTOROLA

获取价格

6A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244C-6200 RENESAS

获取价格

7A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244C-6203 RENESAS

获取价格

Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD244C-6226 RENESAS

获取价格

Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD244C-6255 RENESAS

获取价格

Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD244C-6258 RENESAS

获取价格

Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD244C-6261 RENESAS

获取价格

7A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244C-6263 RENESAS

获取价格

7A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244C-6264 RENESAS

获取价格

Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast