BD244A-S

更新时间： 2024-11-26 12:42:35

品牌	Logo	应用领域
伯恩斯 - BOURNS		晶体晶体管
页数	文件大小	规格书
4页	142K
描述
PNP SILICON POWER TRANSISTORS

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中文翻译

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技术参数
数据手册
替代型号

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BD244A-S 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.56	最大集电极电流 (IC)：	6 A
配置：	Single	最小直流电流增益 (hFE)：	15
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	65 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

BD244A-S 数据手册

BD244, BD244A, BD244B, BD244C

PNP SILICON POWER TRANSISTORS

Designed for Complementary Use with the

BD243 Series

TO-220 PACKAGE

(TOP VIEW)

65 W at 25°C Case Temperature

6 A Continuous Collector Current

10 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

This series is currently available, but

not recommended for new designs.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD244

-55

BD244A

BD244B

BD244C

BD244

-70

Collector-emitter voltage (R_BE= 100 Ω)

V_CER

-90

-115

-45

BD244A

BD244B

BD244C

-60

Collector-emitter voltage (I_C= -30 mA)

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

-5

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

-6

-10

-3

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

62.5

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= -0.4 A, R_BE= 100 Ω,

V_BE(off)= 0, R_S= 0.1 Ω, V_CC= -20 V.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4

中文翻译

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BD244A-S 替代型号

型号	品牌	替代类型	描述	数据表
TIP42AG	ONSEMI	功能相似	Complementary Silicon Plastic Power Transistors
BD244A	FAIRCHILD	功能相似	Medium Power Linear and Switching Applications

与BD244A-S相关器件

型号	品牌	获取价格	描述	数据表
BD244AT	MOTOROLA	获取价格	Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
BD244AU	MOTOROLA	获取价格	6A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244AU2	MOTOROLA	获取价格	6A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244AUA	MOTOROLA	获取价格	6A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244AW	MOTOROLA	获取价格	6A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244AWD	MOTOROLA	获取价格	Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
BD244B	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
BD244B	FAIRCHILD	获取价格	Medium Power Linear and Switching Applications
BD244B	MOTOROLA	获取价格	Complementary Silicon Plastic Power Transistors
BD244B	ONSEMI	获取价格	POWER TRANSISTORS COMPLEMENTARY SILICON

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