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BD243CTU

更新时间: 2024-11-02 12:59:39
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飞兆/仙童 - FAIRCHILD 开关
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BD243CTU 数据手册

 浏览型号BD243CTU的Datasheet PDF文件第2页浏览型号BD243CTU的Datasheet PDF文件第3页浏览型号BD243CTU的Datasheet PDF文件第4页 
BD243/A/B/C  
Medium Power Linear and Switching  
Applications  
Complement to BD244, BD244A, BD244B and BD244C respectively  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
CBO  
: BD243  
45  
60  
80  
V
V
V
V
: BD243A  
: BD243B  
: BD243C  
100  
V
Collector-Emitter Voltage  
CEO  
: BD243  
45  
60  
80  
V
V
V
V
: BD243A  
: BD243B  
: BD243C  
100  
V
Emitter-Base Voltage  
Collector Current (DC)  
5
V
A
EBO  
I
I
I
6
C
*Collector Current (Pulse)  
Base Current  
10  
A
CP  
B
2
65  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BD243  
I =30mA, I =0  
45  
60  
80  
V
V
V
V
C
B
: BD243A  
: BD243B  
: BD243C  
100  
I
Collector Cut-off Current : BD243/243A  
: BD243B/243C  
V
V
= 30V, I = 0  
0.7  
0.7  
mA  
mA  
CEO  
CE  
CE  
B
= 60V, I = 0  
B
I
Collector Cut-off Current : BD243  
V
V
V
V
= 45V, V = 0  
0.4  
0.4  
0.4  
0.4  
mA  
mA  
mA  
mA  
CES  
CE  
CE  
CE  
CE  
BE  
: BD243A  
: BD243B  
: BD243C  
= 60V, V = 0  
BE  
= 80V, V = 0  
BE  
= 100V, V = 0  
BE  
I
Emitter Cut-off Current  
*DC Current Gain  
V
= 5V, I = 0  
1
mA  
EBO  
EB  
C
h
V
V
= 4V, I = 0.3A  
30  
15  
FE  
CE  
CE  
C
= 4V, I = 3A  
C
V
(sat)  
*Collector-Emitter Saturation Voltage  
*Base-Emitter ON Voltage  
I = 6A, I = 1A  
1.5  
2
V
V
CE  
C
B
V
(on)  
V
= 4V, I = 6A  
BE  
CE C  
* Pulse Test :PW=300µs, duty Cycle<20% Pulsed  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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