5秒后页面跳转
BD241B-S PDF预览

BD241B-S

更新时间: 2024-11-13 13:05:55
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管局域网
页数 文件大小 规格书
5页 107K
描述
暂无描述

BD241B-S 数据手册

 浏览型号BD241B-S的Datasheet PDF文件第2页浏览型号BD241B-S的Datasheet PDF文件第3页浏览型号BD241B-S的Datasheet PDF文件第4页浏览型号BD241B-S的Datasheet PDF文件第5页 
BD241, BD241A, BD241B, BD241C  
NPN SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD242 Series  
TO-220 PACKAGE  
(TOP VIEW)  
40 W at 25°C Case Temperature  
3 A Continuous Collector Current  
5 A Peak Collector Current  
1
2
3
B
C
E
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD241  
55  
BD241A  
BD241B  
BD241C  
BD241  
70  
Collector-emitter voltage (RBE = 100 )  
VCER  
V
90  
115  
45  
BD241A  
BD241B  
BD241C  
60  
Collector-emitter voltage (IC = 30 mA)  
VCEO  
V
80  
100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
3
5
A
1
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
40  
W
W
mJ  
°C  
°C  
°C  
2
2
½LIC  
32  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,  
BE(off) = 0, RS = 0.1 , VCC = 20 V.  
V
JUNE 1973 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

BD241B-S 替代型号

型号 品牌 替代类型 描述 数据表
BDW53 BOURNS

类似代替

NPN SILICON POWER DARLINGTONS
BDT61 BOURNS

类似代替

NPN SILICON POWER DARLINGTONS
TIP120 STMICROELECTRONICS

功能相似

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

与BD241B-S相关器件

型号 品牌 获取价格 描述 数据表
BD241BT MOTOROLA

获取价格

3A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD241BTU FAIRCHILD

获取价格

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD241BU MOTOROLA

获取价格

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD241BU2 MOTOROLA

获取价格

3A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD241BUA MOTOROLA

获取价格

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD241BW MOTOROLA

获取价格

3A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD241BWD MOTOROLA

获取价格

3A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD241C ISC

获取价格

Silicon NPN Power Transistors
BD241C RECTRON

获取价格

TO-220 - Power Transistors and Darlingtons
BD241C BOURNS

获取价格

NPN SILICON POWER TRANSISTORS