BD241

更新时间： 2024-10-31 22:39:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关晶体管局域网
页数	文件大小	规格书
3页	31K
描述
Medium Power Linear and Switching Applications

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中文翻译

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数据手册

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BD241 数据手册

BD241/A/B/C

Medium Power Linear and Switching

Applications

•

Complement to BD242/A/B/C respectively

TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

CEO

: BD241

: BD241A

: BD241B

: BD241C

100

Collector-Emitter Voltage

CER

: BD241

: BD241A

: BD241B

: BD241C

115

Emitter-Base Voltage

Collector Current (DC)

EBO

*Collector Current (Pulse)

Base Current

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

(sus)

* Collector-Emitter Sustaining Voltage

CEO

: BD241

I = - 30mA, I = 0

: BD241A

: BD241B

: BD241C

100

Collector Cut-off Current : BD241/A

: BD241B/C

= 30V, I = 0

= 60V, I = 0

0.3

CEO

Collector Cut-off Current : BD241

= 45V, V = 0

0.2

CES

: BD241A

: BD241B

: BD241C

= 60V, V = 0

= 80V, V = 0

= 100V, V = 0

Emitter Cut-off Current

* DC Current Gain

= 5V, I = 0

EBO

= 4V, I = 1A

= 4V, I = 3A

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter ON Voltage

I = 3A, I = 0.6A

1.2

1.8

(on)

= 4V, I = 3A

CE C

* Pulse Test: PW=350µs, duty Cycle≤2% Pulsed

Rev. A, February 2000

12 3

中文翻译

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