Datasheet > BD241

BD241

更新时间： 2024-09-16 06:41:51

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	91K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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BD241 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BD241/A/B/C

DESCRIPTION

·With TO-220C package

·Complement to type BD242/A/B/C

APPLICATIONS

·For medium power linear and

switching applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD241

BD241A

BD241B

BD241C

BD241

V_CBO

Collector-base voltage

Open emitter

115

BD241A

BD241B

BD241C

V_CEO

Collector-emitter voltage

Open base

100

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

ꢀ

Collector current-peak

Base current

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-65~150

T_stg

ꢀ

12 3

中文翻译

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