5秒后页面跳转
BD240TU PDF预览

BD240TU

更新时间: 2024-11-06 20:07:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
3页 27K
描述
Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

BD240TU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.37最大集电极电流 (IC):2 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BD240TU 数据手册

 浏览型号BD240TU的Datasheet PDF文件第2页浏览型号BD240TU的Datasheet PDF文件第3页 
BD240/A/B/C  
Medium Power Linear and Switching  
Applications  
Complement to BD239/A/B/C respectively  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
CEO  
: BD240  
- 45  
- 60  
- 80  
V
V
V
V
: BD240A  
: BD240B  
: BD240C  
- 100  
V
Collector-Emitter Voltage  
CER  
: BD240  
- 55  
- 70  
- 90  
V
V
V
V
: BD240A  
: BD240B  
: BD240C  
- 115  
V
Emitter-Base Voltage  
Collector Current (DC)  
- 5  
- 2  
V
A
EBO  
I
C
I
I
*Collector Current (Pulse)  
Base Current  
- 4  
A
CP  
B
- 0.6  
30  
A
P
Collector Dissipation ( T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BD240  
I = - 30mA, I = 0  
- 45  
- 60  
- 80  
V
V
V
V
C
B
: BD240A  
: BD240B  
: BD240C  
- 100  
I
Collector Cut-off Current : BD240/A  
: BD240B/C  
V
V
= - 30V, I = 0  
= - 60V, I = 0  
B
- 0.3  
- 0.3  
mA  
mA  
CEO  
CE  
CE  
B
I
Collector Cut-off Current : BD240  
V
V
V
V
= - 45V, V = 0  
- 0.2  
- 0.2  
- 0.2  
- 0.2  
mA  
mA  
mA  
mA  
CES  
CE  
CE  
CE  
CE  
BE  
: BD240A  
: BD240B  
: BD240C  
= - 60V, V = 0  
BE  
= - 80V, V = 0  
BE  
= - 100V, V = 0  
BE  
I
Emitter Cut-off Current  
* DC Current Gain  
V
= - 5V, I = 0  
- 1  
mA  
EBO  
EB  
C
h
V
V
= - 4V,I = - 0.2A  
40  
15  
FE  
CE  
CE  
C
= - 4V, I = - 1A  
C
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I
= - 1A , I = - 0.2A  
- 0.7  
- 1.3  
V
V
CE  
C
B
V
(on)  
V
= - 4V, I = - 1A  
BE  
CE C  
* Pulse Test: PW=350µs, duty Cycle2.0% Pulsed  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

与BD240TU相关器件

型号 品牌 获取价格 描述 数据表
BD241 BOURNS

获取价格

NPN SILICON POWER TRANSISTORS
BD241 COMSET

获取价格

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
BD241 ISC

获取价格

Silicon NPN Power Transistors
BD241 SAVANTIC

获取价格

Silicon NPN Power Transistors
BD241 MOSPEC

获取价格

POWER TRANSISTORS(3A,40W)
BD241 POINN

获取价格

NPN SILICON POWER TRANSISTORS
BD241 TRSYS

获取价格

NPN SILICON POWER TRANSISTOR
BD241 FAIRCHILD

获取价格

Medium Power Linear and Switching Applications
BD241 BOCA

获取价格

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS
BD241 MICRO-ELECTRONICS

获取价格

NPN SILCON EPITAXIAL BASE POWER TRANSISTORS