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BD240 PDF预览

BD240

更新时间: 2024-12-01 06:41:51
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 120K
描述
Silicon PNP Power Transistors

BD240 技术参数

生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.67
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
最大功率耗散 (Abs):30 W表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
VCEsat-Max:0.7 VBase Number Matches:1

BD240 数据手册

 浏览型号BD240的Datasheet PDF文件第2页浏览型号BD240的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
BD240/A/B/C  
DESCRIPTION  
·
·With TO-220C package  
·Complement to type BD239/A/B/C  
APPLICATIONS  
·For medium power linear and  
switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VAL
-55  
UNIT  
BD240  
BD240A  
BD240B  
BD240C  
BD240  
-70  
VCBO  
Collector-base voltage  
Open emitter  
V
-90  
-115  
-45  
BD240A  
BD240B  
BD240C  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
-2  
Collector current-peak  
Base current  
-4  
A
-0.6  
30  
A
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
150  
-65~150  
Tstg  

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