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BD239J69Z PDF预览

BD239J69Z

更新时间: 2024-02-01 04:59:24
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
3页 55K
描述
Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

BD239J69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.66最大集电极电流 (IC):2 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BD239J69Z 数据手册

 浏览型号BD239J69Z的Datasheet PDF文件第2页浏览型号BD239J69Z的Datasheet PDF文件第3页 
BD239/A/B/C  
Medium Power Linear and Switching  
Applications  
Complement to BD240/A/B/C respectively  
1
TO-220  
1.Base 2.Collector 3.Emitter  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Emitter Voltage  
CEO  
: BD239  
45  
60  
80  
V
V
V
V
: BD239A  
: BD239B  
: BD239C  
100  
V
Collector-Emitter Voltage  
CER  
: BD239  
55  
70  
90  
V
V
V
V
: BD239A  
: BD239B  
: BD239C  
115  
V
Emitter-Base Voltage  
Collector Current (DC)  
5
V
A
EBO  
I
2
C
I
I
*Collector Current (Pulse)  
Base Current  
4
0.6  
A
CP  
B
A
P
Collector Dissipation (T =25°C)  
30  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
*Collector-Emitter Sustaining Voltage  
CEO  
: BD239  
I
= 30mA, I = 0  
45  
60  
80  
V
V
V
V
C
B
: BD239A  
: BD239B  
: BD239C  
100  
I
Collector Cut-off Current  
: BD239/A  
CEO  
V
V
= 30V, I = 0  
= 60V, I = 0  
B
0.3  
0.3  
mA  
mA  
CE  
CE  
B
: BD239B/C  
I
Collector Cut-off Current  
: BD239  
CES  
V
V
V
V
= 45V, V = 0  
0.2  
0.2  
0.2  
0.2  
mA  
mA  
mA  
mA  
CE  
CE  
CE  
CE  
BE  
: BD239A  
: BD239B  
: BD239C  
= 60V, V = 0  
BE  
= 80V, V = 0  
BE  
= 100V, V = 0  
BE  
I
Emitter Cut-off Current  
*DC Current Gain  
V
= 5V, I = 0  
1
mA  
EBO  
EB  
C
h
V
V
= 4V, I = 0.2A  
40  
15  
FE  
CE  
CE  
C
= 4V, I = 1A  
C
V
(sat)  
*Collector-Emitter Saturation Voltage  
*Base-Emitter ON Voltage  
I
= 1A, I = 0.2A  
0.7  
1.3  
V
V
CE  
C
B
V
(on)  
V
= 4V, I = 1A  
CE C  
BE  
* Pulse Test: PW=350µs, duty Cycle2.0% Pulsed  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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