Datasheet > BD2320EFJ-LA

BD2320EFJ-LA

更新时间： 2023-09-03 20:25:02

品牌	Logo	应用领域
罗姆 - ROHM		栅极驱动二极管驱动器
页数	文件大小	规格书
21页	1127K
描述
本产品面向工业设备市场、可保证长期稳定供货。是适合这些用途的产品。BD2320EFJ-LA是可驱动使用阴极负载方式的外接Nch-FET的100V耐压高边/低边栅极驱动器。内置100V耐压自举二极管，输入逻辑电源电压可使用3.3V及5.0V两种。作为保护功能，高边及低边搭载低电压误动作防止电路(UVLO)。

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BD2320EFJ-LA 数据手册

Datasheet

100 V VB 3.5 A/4.5 A Peak Current

High Frequency High-Side and Low-Side

Driver

BD2320EFJ-LA BD2320UEFJ-LA

General Description

Key Specification

This is the product guarantees long time support in

industrial market.

◼ High-Side Supply Voltage and Floating Voltage:100 V

◼ Output Voltage Range:

◼ Output Current Io+/Io-:

◼ Propagation Delay:

◼ Delay Matching:

◼ Offset Voltage Pin Leak Current:

◼ Operating Temperature Range:

7.5 V to 14.5 V

3.5 A/4.5 A

27 ns (Typ)

12 ns (Max)

10 µA (Max)

-40 °C to +125 °C

BD2320EFJ-LA and BD2320UEFJ-LA are the 100 V

maximum voltage High-Side and Low-Side gate drivers

which can drive external Nch-FET using the bootstrap

method. The driver includes a 100 V bootstrap diode and

independent inputs control for High-Side and Low-Side.

3.3 V and 5.0 V are available for interface voltage. Under

Voltage Lockout circuits are built in for High-Side and

Low-Side.

Package

HTSOP-J8

W (Typ) x D (Typ) x H (Max)

4.9 mm x 6.0 mm x 1.0 mm

Features

◼ Long Time Support Product for Industrial Applications.

◼ Under Voltage Lockout (UVLO) for High-Side and

Low-Side Driver

◼ 3.3 V and 5.0 V Interface Voltage

◼ Output In-phase with Input Signal

Applications

◼ Power Supplies for Telecom and Datacom.

◼ MOSFET Application

◼ Half-bridge and Full-bridge Converters

◼ Forward Converters

Typical Application Circuit

Up to 88 V

12 V

HIN

LIN

LOAD

VCC

GND

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.

www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0Q2Q0A800840-1-2

29.Mar.2022 Rev.002

1/18

12 3 4 5 6 7...21

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