Datasheet > BD231

BD231

更新时间： 2024-11-28 06:41:51

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	108K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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BD231 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

BD231

DESCRIPTION

·With TO-126 package

·Complement to type BD230

·High current (Max:-1.5A)

·Low voltage (Max: -80V)

APPLICATIONS

·Drive stage in TV circuits

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

VALUE

-100

-80

UNIT

Open emitter

Open base

ꢀ

Open collector

-5

Collector current (DC)

Collector current-Peak

Base current-Peak

-1.5

I_CM

-3

I_BM

-1

P_D

Total power dissipation

Junction temperature

Storage temperature

T_mb≤62ꢀ

12.5

P_D

T_C=25ꢀ

T_j

150

T_stg

-65~150

ꢀ

T_amb

Operating ambient temperature

ꢀ

12 3

中文翻译

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