BD190

更新时间： 2024-10-01 08:51:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	40K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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BD190 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD190

DESCRIPTION

·With TO-126 package

·High current

·Complement to type BD189

APPLICATIONS

·For use in 5 to 10 watt audio amplifiers

utilizing complementary or quasi

complementary circuits.

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter -base voltage

Collector current (DC)

Base current

CONDITIONS

VALUE

-70

UNIT

Open emitter

Open base

-60

Open collector

-5

-4

I_B

-2

P_t

Total power dissipation

Junction temperature

Storage temperature

_mb≤70℃

℃

T_j

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance, junction to case

VALUE

UNIT

R_{th j-a}

3.12

℃/W

12 3

中文翻译

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