Datasheet > BD1796STU

BD1796STU

更新时间： 2024-02-06 19:12:02

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	37K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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BD1796STU 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大集电极电流 (IC)：	3 A
配置：	Single	最小直流电流增益 (hFE)：	40
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	30 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	3 MHz
Base Number Matches：	1

BD1796STU 数据手册

BD175/177/179

Medium Power Linear and Switching

Applications

•

Complement to BD 176/178/180 respectively

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

*Collector-Base Voltage

Collector-Emitter Voltage

: BD175

: BD177

: BD179

CBO

: BD175

: BD177

: BD179

CEO

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

EBO

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

(sus)

* Collector-Emitter Sustaining Voltage

CEO

: BD175

: BD177

: BD179

= 100mA, I = 0

Collector Cut-off Current

: BD175

: BD177

: BD179

= 45V, I = 0

100

µA

CBO

= 60V, I = 0

= 80V, I = 0

Emitter Cut-off Current

* DC Current Gain

= 5V, I = 0

EBO

= 2V, I = 150mA

250

FE1

FE2

= 2V, I = 1A

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter On Voltage

= 1A, I = 0.1A

0.8

1.3

(on)

= 2V, I = 1A

Current Gain Bandwidth Product

= 10V, I = 250mA

MHz

* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed

Classificntion

Classification

100 ~ 250

40 ~ 100

63 ~ 160

FE1

* Classification 16: Only BD175

Rev. A, February 2000

12 3 4

中文翻译

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