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BD179 PDF预览

BD179

更新时间: 2024-01-14 18:17:17
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
5页 63K
描述
NPN SILICON TRANSISTOR

BD179 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.19最大集电极电流 (IC):3 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BD179 数据手册

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BD179  
NPN SILICON TRANSISTOR  
SGS-THOMSON PREFERRED SALESTYPE  
NPN TRANSISTOR  
APPLICATION  
GENERAL PURPOSE SWITCHING  
DESCRIPTION  
The BD179 is a silicon epitaxial planar NPN  
transistor in Jedec SOT-32 plastic package,  
designed for medium power linear and switching  
applications.  
1
2
3
SOT-32  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
V
80  
80  
V
5
V
3
A
IB  
Base Current  
Total Dissipation at Tc 25 oC  
7
30  
A
Ptot  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/5  
September 1997  

BD179 替代型号

型号 品牌 替代类型 描述 数据表
BD179 CDIL

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BD179 FAIRCHILD

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BD179 ONSEMI

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