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BD179

更新时间: 2024-01-31 00:47:41
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
4页 110K
描述
POWER TRANSISTORS NPN SILICON

BD179 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.19最大集电极电流 (IC):3 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BD179 数据手册

 浏览型号BD179的Datasheet PDF文件第2页浏览型号BD179的Datasheet PDF文件第3页浏览型号BD179的Datasheet PDF文件第4页 
Order this document  
by BD179/D  
SEMICONDUCTOR TECHNICAL DATA  
3.0 AMPERES  
POWER TRANSISTORS  
NPN SILICON  
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing  
complementary or quasi complementary circuits.  
DC Current Gain — h = 40 (Min) @ I = 0.15 Adc  
FE C  
BD179 is complementary with BD180  
80 VOLTS  
30 WATTS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CEO  
V
CBO  
V
EBO  
80  
5.0  
3.0  
1.0  
I
C
Base Current  
I
B
Total Device Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
30  
240  
Watts  
mw/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
CASE 77–08  
TO–225AA TYPE  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
4.16  
C/W  
JC  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
Collector–Emitter Sustaining Voltage*  
V
80  
Vdc  
(BR)CEO  
(I = 0.1 Adc, I = 0)  
C
B
Collector Cutoff Current  
(V = 80 Vdc, I = 0)  
I
0.1  
1.0  
mAdc  
mAdc  
CBO  
CB  
Emitter Cutoff Current  
(V = 5.0 Vdc, I = 0)  
E
I
EBO  
BE  
C
DC Current Gain  
h
FE  
(I = 0.15 A, V  
C
= 2.0 V)  
BD179–10  
ALL  
63  
15  
160  
CE  
= 2.0 V)  
CE  
(I = 1.0 A, V  
C
Collector–Emitter Saturation Voltage*  
(I = 1.0 Adc, I = 0.1 Adc)  
V
0.8  
1.3  
Vdc  
Vdc  
MHz  
CE(sat)  
C
B
Base–Emitter On Voltage*  
(I = 1.0 Adc, V = 2.0 Vdc)  
V
BE(on)  
C
CE  
Current–Gain – Bandwidth Product  
f
T
3.0  
(I = 250 mAdc, V  
CE  
= 10 Vdc, f = 1.0 MHz)  
300 As, Duty Cycle  
C
* Pulse Test: Pulse Width  
2.0%.  
REV 7  
Motorola, Inc. 1995

BD179 替代型号

型号 品牌 替代类型 描述 数据表
BD179G ONSEMI

完全替代

Plastic Medium-Power NPN Silicon Transistor
BD179 CDIL

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Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD179 STMICROELECTRONICS

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NPN SILICON TRANSISTOR

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BD179-10 MOTOROLA

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BD179-10 ONSEMI

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BD17910STU ONSEMI

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BD17916 FAIRCHILD

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