是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.65 | 最大集电极电流 (IC): | 3 A |
配置: | Single | 最小直流电流增益 (hFE): | 100 |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 30 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 标称过渡频率 (fT): | 3 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD1796 | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
BD179-6 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126 | |
BD1796STU | FAIRCHILD |
获取价格 |
Transistor | |
BD179G | ONSEMI |
获取价格 |
Plastic Medium-Power NPN Silicon Transistor | |
BD179LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
BD18 | AMPHENOL |
获取价格 |
Interconnection Device | |
BD180 | CDIL |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
BD180 | FAIRCHILD |
获取价格 |
Medium Power Linear and Switching Applications | |
BD180 | ISC |
获取价格 |
Silicon PNP Power Transistors | |
BD180 | MOTOROLA |
获取价格 |
Plastic Medium Power Silicon PNP Transistor |