是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-225AA | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.56 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 63 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 30 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 3 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD17910STU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
BD17910STU | ONSEMI |
获取价格 |
3.0 A, 80 V Medium Power NPN Bipolar Power Transistor | |
BD17916 | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
BD179-16 | FAIRCHILD |
获取价格 |
POWER TRANSISTOR, TO-126, TO-126, 3 PIN | |
BD179-16 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
BD1796 | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
BD179-6 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126 | |
BD1796STU | FAIRCHILD |
获取价格 |
Transistor | |
BD179G | ONSEMI |
获取价格 |
Plastic Medium-Power NPN Silicon Transistor | |
BD179LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ |