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BD178-10 PDF预览

BD178-10

更新时间: 2024-02-19 07:49:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 122K
描述
3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126

BD178-10 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliant风险等级:5.83
最大集电极电流 (IC):3 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):63
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP最大功率耗散 (Abs):30 W
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
VCEsat-Max:0.8 V

BD178-10 数据手册

 浏览型号BD178-10的Datasheet PDF文件第2页浏览型号BD178-10的Datasheet PDF文件第3页浏览型号BD178-10的Datasheet PDF文件第4页浏览型号BD178-10的Datasheet PDF文件第5页浏览型号BD178-10的Datasheet PDF文件第6页浏览型号BD178-10的Datasheet PDF文件第7页 
BD176/178/180  
Medium Power Linear and Switching  
Applications  
Complement to BD 175/177/179 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
*Collector-Base Voltage  
Collector-Emitter Voltage  
: BD176  
: BD178  
: BD180  
- 45  
- 60  
- 80  
V
V
V
CBO  
: BD176  
: BD178  
: BD180  
- 45  
- 60  
- 80  
V
V
V
CEO  
V
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
- 5  
- 3  
V
A
EBO  
I
I
C
- 7  
A
C
P
Collector Dissipation (T =25°C)  
30  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BD176  
: BD178  
: BD180  
I = - 100mA, I = 0  
- 45  
- 60  
- 80  
V
V
V
C
B
I
Collector Cut-off Current : BD176  
V
V
V
= - 45V, I = 0  
- 100  
- 100  
- 100  
µA  
µA  
µA  
CBO  
CB  
CB  
CB  
E
: BD178  
: BD180  
= - 60V, I = 0  
E
= - 80V, I = 0  
E
I
Emitter Cut-off Current  
* DC Current Gain  
V
= - 5V, I = 0  
- 1  
mA  
EBO  
EB  
C
h
h
V
V
= - 2V, I = - 150mA  
40  
15  
250  
FE1  
FE2  
CE  
CE  
C
= - 2V, I = - 1A  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I = -1 A , I = - 0.1A  
- 0.8  
- 1.3  
V
V
CE  
C
B
(on)  
V
= - 2V, I = -1 A  
C
BE  
CE  
CE  
f
Current Gain Bandwidth Product  
V
= -10V, I = - 250mA  
3
MHz  
T
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed  
h
Classificntion  
FE  
Classification  
6
10  
16  
100 ~ 250  
h
40 ~ 100  
63 ~ 160  
FE1  
* Classification 16: Only BD 176  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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