是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.83 | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 12.5 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD1406STU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD140-BP | MCC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD140G | ONSEMI |
获取价格 |
Plastic Medium Power Silicon PNP Transistor | |
BD140G-06-AA3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
BD140G-06-T6C-K | UTC |
获取价格 |
Power Bipolar Transistor | |
BD140G-06-TM3-T | UTC |
获取价格 |
Power Bipolar Transistor | |
BD140G-10-AA3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, | |
BD140G-10-T100-K | UTC |
获取价格 |
PNP SILICON TRANSISTOR | |
BD140G-10-T60-K | UTC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD140G-10-TM3-T | UTC |
获取价格 |
PNP SILICON TRANSISTOR |