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BD1406S PDF预览

BD1406S

更新时间: 2024-11-02 19:25:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
4页 40K
描述
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

BD1406S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.83最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):12.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BD1406S 数据手册

 浏览型号BD1406S的Datasheet PDF文件第2页浏览型号BD1406S的Datasheet PDF文件第3页浏览型号BD1406S的Datasheet PDF文件第4页 
BD136/138/140  
Medium Power Linear and Switching  
Applications  
Complement to BD135, BD137 and BD139 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
: BD136  
: BD138  
: BD140  
- 45  
- 60  
- 80  
V
V
V
CBO  
: BD136  
: BD138  
: BD140  
- 45  
- 60  
- 80  
V
V
V
CEO  
V
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
- 5  
- 1.5  
V
A
EBO  
I
I
C
- 3.0  
A
CP  
B
I
- 0.5  
A
P
Collector Dissipation (T =25°C)  
12.5  
W
W
°C  
°C  
C
C
P
Collector Dissipation (T =25°C)  
1.25  
C
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BD136  
: BD138  
: BD140  
I = - 30mA, I = 0  
- 45  
- 60  
- 80  
V
V
V
C
B
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
V
= - 30V, I = 0  
- 0.1  
- 10  
µA  
µA  
CBO  
EBO  
CB  
E
V
= - 5V, I = 0  
C
EB  
h
h
h
V
V
V
= - 2V, I = - 5mA  
25  
25  
40  
FE1  
FE2  
FE3  
CE  
CE  
CE  
C
= - 2V, I = - 0.5A  
C
= - 2V, I = - 150mA  
250  
- 0.5  
- 1  
C
V
V
(sat)  
(on)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I = - 500mA, I = - 50mA  
V
V
CE  
C
B
V
= - 2V, I = - 0.5A  
BE  
CE  
C
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed  
h
Classificntion  
FE  
Classification  
6
10  
16  
100 ~ 250  
h
40 ~ 100  
63 ~ 160  
FE3  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

BD1406S 替代型号

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